Three dimensional simulation for implantation with ions from plasma source

Abstract

A three-dimensional particle simulation model of plasma motion under the influence of the highly negative periodic electrical pulse was proposed. The pulses with the time period of 0-30 sec was applied under the periodic boundary condition. The ion density distribution was determined by the Maxwell’s and Lorentz force equations. The electrical pulse did not affect the ion density distribution when the frequency of the pulses was higher than the plasma frequency. The study simulated and analyzed the penetration of the ions in the crystalline medium by employing the molecular dynamic model. The universal ZBL long range potential and the Lennard Jones short range potential were considered in order to determine the interatomic force in the crystalline material, which impeded the motion of an ion in the medium. For this study, the molecular dynamic model was numerically implemented to determine the ion range and to describe the effect on the motion of an ion in the medium. Since the ion range in the lattice medium evaluated by this model was found to be comparable to the result obtained from the standard TRIM/SRIM code, it was concluded that the molecular model was adequate for the calculation of the ion range with the advantage that the motion of an ion in the crystalline medium could also be analyzed. The developed model was then used to describe the ion coating process on the target. The layers of the coating ions were classified based on the ion range and the ions density distribution as the coating layer, the mixed layer and the basement layer. The model could be used to predict the thickness of the mixed layer and the ion intensity in the coating layer for the given ion energy. The time needed to create the mixed and the coating layers with the desired thickness and density could also be calculated.