Structural and optical properties analysis of lattice-matched In[subscript x]Ga[subscript 1-x]P[subscript 1-y]N[aubscript y]/GaP single quantum well grown by MOVPE

Abstract

In this thesis, structural and optical properties of the lattice-matched In[subscript x]Ga[subscript 1-x]P[subscript 1-y]N[subscript y]/GaP single quantum wells (SQWs) grown on GaP (001) substrates by metalorganic vapor phase epitaxy (MOVPE) have been investigated. The effects of both well-which and compositional variations are established. The results from high-resolution X-ray diffraction (HRXRD) measurements indicate that the lattice-matched In[subscript x]Ga[subscript 1-x]P[subscript 1-y]N[subscript y]/GaP SQWs were realized with excellent crystal quality and fairly flat interfaces. Photoluminescence (PL) spectra show the visible light emission (yellow-red emission) from the SQWs. With decreasing well-width, the PL peak position and the absorption edge of PLE spectra exhibit the blue-shift in energy. This result confirms the quantum confinement effect by the well. On the other hand, with increasing In and N concentrations, the PL peak position and the absorption edge of PLE spectra exhibit the red-shift to lower energy, indicating the lowering of the InGaPN conduction band edge. The conduction band offset ([delta]E[subscript c]) of the InGaAPN/GaP quantum structure is estimated to be about 270-490 meV, which depends on the In and N concentrations in the well. However, the value of conduction band offset is limited by the large number of non-radiative defects caused in the high In and N incorporating samples.