Effect of dopants on absorption edge of photostrictive PLZT

Abstract

PLZT ceramics have drawn a considerable attention due to their promising photostrictive behaviors, superposition of photovoltaic and converse-piezoelectric effects. This study concentrated on photovoltaic effect photostriction, piezoelectricity and optical absorption edge as functions of dopants. (Pb0.97La0 03)(Zr0.52Ti0.48)i-0.03/4O3 [PLZT, (3/52/48)] ceramics doped with 0.5 at% of selected dopants were prepared by a conventional oxide mixing technique and sintered at 1250 ℃ for 2h. The dopant substituted in the lattice of PLZT unit cell at the A or B-sites as donor or acceptor. Donor B-site, donor A-site and isovalence dopants were found to raise the photovoltaic and photostrictive properties. However, the acceptors and 3d transition dopants showed the adverse effect on PLZT ceramics. Cu2+ and W6+ are the promising dopants in shifting the optical absorption edge from 375 nm in undoped PLZT ceramic to 390 nm, closer to the visible range.